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Characterization of lattice defects by means of a double crystal diffractometer

Published/Copyright: August 25, 2010

Abstract

Silicon crystals grown in a hydrogen atmosphere were heattreated at different temperatures. With the aid of a double-crystal diffractometer rocking curves of the specimen were recorded. Only the sample heat-treated at 1000°C showed significant diffuse scattering due to clustering of hydrogen. The mean cluster radius was determined.

Published Online: 2010-8-25
Published in Print: 1986-2-1

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