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Characterization of lattice defects by means of a double crystal diffractometer
Published/Copyright:
August 25, 2010
Abstract
Silicon crystals grown in a hydrogen atmosphere were heattreated at different temperatures. With the aid of a double-crystal diffractometer rocking curves of the specimen were recorded. Only the sample heat-treated at 1000°C showed significant diffuse scattering due to clustering of hydrogen. The mean cluster radius was determined.
Published Online: 2010-8-25
Published in Print: 1986-2-1
© 2015 Oldenbourg Wissenschaftsverlag GmbH, Rosenheimer Str. 145, 81671 München
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Articles in the same Issue
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- High-temperature transformation of tridymite single crystals to cristobalite*
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- The crystal structure of U2NiC3
- The crystal structure of Zr3AlN
- Crystal structure of tris (glycine) calcium(II) dichloride
- Einführung in eine anorganische Strukturchemie
- The crystal structure refinement of a natural mordenite
- Characterization of lattice defects by means of a double crystal diffractometer
- Preparation and crystal structures of Ca(N3)2[OS(CH3)2]2 and Sr(N3)2[OS(CH3)2]2
- The crystal structures of Na2TiF6 and Na2SiF6
- The crystal structure of ethyl 5-methyl-l,2,3-triazino [5,4-b]-indole 4-carboxylate N(3)-oxide
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