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Characterization of WMoO3 Thin Films and its n-WMoO3/p-Si Junction Diodes Via JNS Pyrolysis Technique

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Veröffentlicht/Copyright: 15. Oktober 2016

Abstract

The jet nebulizer sprayed tungsten doped molybdenum trioxide (WMoO3) thin films and its P-N junction diode parameters have been studied for different doping concentrations (0, 3, 6 and 9 wt.%) of tungsten (W). The prepared films were studied by XRD, SEM, EDX, UV and I-V. The structural analyses of XRD and SEM revealed that the WMoO3 films depicted the orthorhombic structure in polycrystalline nature and showed the sub-microsized plate and flake-like structures on the surface. The presence of the elements such as W, Mo and O in the WMoO3 films prepared by jet nebulizer spray (JNS) pyrolysis technique was confirmed by the EDX spectra. From UV-vis analysis, the absorbance decreases up to 3 wt.% of WMoO3 then increases. 3 wt.% WMoO3 film exhibited the minimum band gap energy. The electrical property from I-V represents that the maximum average conductivity obtained as 5.70169×10−12 S/cm for 3 wt.% WMoO3 film. From the I-V measurements in darkness and under the illumination, the different diode parameters of ideality factor (n), barrier height (Φb) and sheet resistance (Rs) of n-WMoO3/p-Si were examined using J-V, Cheung’s and Norde methods.

References

1. M. C. Rao, K. Ravindranadh, A. Kasturi, M. S. Shekhawat, Res. J. Recent Sci. 2 (2013) 67.Suche in Google Scholar

2. C. L. Liu, Y. Wang, C. Zhang, X. S. Li, W. S. Dong, Mater. Chem. Phys. 143 (2014) 1111.10.1016/j.matchemphys.2013.11.011Suche in Google Scholar

3. J. Griffin, A. J. Pearson, N. W. Scarratt, T. Wang, D. G. Lidzey, A. R. Buckley, Org. Electron. 15 (2014) 692.10.1016/j.orgel.2013.12.028Suche in Google Scholar

4. H. M. Martinez, J. Torres, M. E. R. Garcia, L. D. L. Carreno, Physica. B 407 (2012) 3199.10.1016/j.physb.2011.12.064Suche in Google Scholar

5. Y. Shen, F. Hu, Y. Yang, Y. Xiao, P. Yan, Z. Li, Surf. Coat. Tech. 240 (2014) 393.10.1016/j.surfcoat.2013.12.062Suche in Google Scholar

6. C. Osterwald, G. Cheek, J. B. DuBow, Appl. Phys. Lett. 35 (1979) 775.10.1063/1.90973Suche in Google Scholar

7. M. Balaji, J. Chandrasekaran, M. Raja, S. Rajesh, J. Mater. Sci. Mater. Electron. (2016) DOI: 10.1007/s10854-016-5300-0.10.1007/s10854-016-5300-0Suche in Google Scholar

8. U. Akin, H. Safak, J. Alloy Compd. 647 (2015) 146.10.1016/j.jallcom.2015.06.164Suche in Google Scholar

9. K. A. Gesheva, T. Ivanova, Chem. Vap. Deposition 12 (2006) 231.10.1002/cvde.200506404Suche in Google Scholar

10. E. M. Gaigneaux, K. Fukui, Y. Iwasawa, Thin Solid Films 374 (2000) 49.10.1016/S0040-6090(00)01196-2Suche in Google Scholar

11. N. Sethupathi, P. Thirunavukkarasu, V. S. Vidhya, R. Thangamuthu, G. V. M. Kiruthika, K. Perumal, H. C. Bajaj, M. Jayachandran J. Mater. Sci. Mater. Electron. 23 (2012) 1087.10.1007/s10854-011-0553-0Suche in Google Scholar

12. M. Balaji, J. Chandrasekaran, M. Raja, Mater. Sci. Semicond. Process. 43 (2016) 104.10.1016/j.mssp.2015.12.009Suche in Google Scholar

13. Y. Huang, G. Li, J. Feng, Q. Zhang, Thin Solid Films 518 (2010) 1892.10.1016/j.tsf.2009.07.119Suche in Google Scholar

14. M. Raja, J. Chandrasekaran, M. Balaji, Silicon (2016) DOI: 10.1007/s12633-016-9413-0.10.1007/s12633-016-9413-0Suche in Google Scholar

15. E. Burstein, Phys. Rev. 93 (1954) 632.10.1103/PhysRev.93.632Suche in Google Scholar

16. G. Turgut, E. F. Keskenler, S. Aydin, E. Sonmez, S. Dogan, B. Duzgun, M. Ertugrul, Superlattices Microst. 56 (2013) 107.10.1016/j.spmi.2013.01.004Suche in Google Scholar

17. X. Zhao, Z. Wu, D. Guo, W. Cui, P. Li, Y. An, L. Li, W. Tang, Semicond. Sci. Technol. 31 (2016) 065010.10.1088/0268-1242/31/6/065010Suche in Google Scholar

18. A. R. Babar, P. R. Deshamukh, R. J. Deokate, D. Haranath, C. H. Bhosale, K. Y. Rajpure J. Phys. D: Appl. Phys. 41 (2008) 135404.10.1088/0022-3727/41/13/135404Suche in Google Scholar

19. D. Zhou, F. Shi, D. Xie, D. H. Wang, X. H. Xia, X. L. Wang, C. D. Gu, J. P. Tu, J. Colloid Interf. Sci. 465 (2016) 112.10.1016/j.jcis.2015.11.068Suche in Google Scholar PubMed

20. N. G. Elfadill, M. R. Hashim, K. M. Chahrour, S. A. Mohammed, Semicond. Sci. Technol. 31 (2016) 065001.10.1088/0268-1242/31/6/065001Suche in Google Scholar

21. P. Scherrer, Nachr. Ges. Wiss. Gottingen 26 (1918) 98.Suche in Google Scholar

22. V. Madhavi, P. Jeevan Kumar, P. Kondaiah, O. M. Hussain, S. Uthanna, Ionics (2014) DOI: 10.1007/s11581-014-1073-8.10.1007/s11581-014-1073-8Suche in Google Scholar

23. K. J. Lethy, D. Beena, V. P. Mahadevan Pillai, V. Ganesan, J. Appl. Phys. 104 (2008) 033515.10.1063/1.2953070Suche in Google Scholar

24. V. Nirupama, M. Chandra Sekhar, T. K. Subramanyam, S. Uthanna, J. Phys. Conf. Ser. 208 (2010) 012101.10.1088/1742-6596/208/1/012101Suche in Google Scholar

25. S. M. Sze, (2nd ed.): Semiconductor Devices, Wiley, New York (2001), P. 224.Suche in Google Scholar

26. B. Keskin, C. Denktas, A. Altındal, U. Avcıata, A. Gul, Polyhedron 38 (2012) 121.10.1016/j.poly.2012.02.033Suche in Google Scholar

27. L. R. Canfield, R. Vest, T. N. Woods, R. Korde, Ultraviolet Tech. V 2282 (1994) 31.10.1117/12.186628Suche in Google Scholar

28. M. Biber, O. Gullu, S. Forment, R. L. Van Meirhaeghe, A. Turut, Semicond. Sci. Technol. 21 (2006) 1.10.1088/0268-1242/21/1/001Suche in Google Scholar

29. L. D. Rao, K. S. Latha, V. R. Reddy, C. J. Choi, Vacuum 119 (2015) 276.10.1016/j.vacuum.2015.06.003Suche in Google Scholar

30. N. Senthil kumar, M. Sethu Raman, J. Chandrasekaran, R. Priya, M. Chavali, R. Suresh, Mater. Sci. Semicond. Process. 41 (2016) 497.10.1016/j.mssp.2015.08.020Suche in Google Scholar

31. S. K. Cheung, N. W. Cheung, Appl. Phys. Lett. 49 (1986) 85.10.1063/1.97359Suche in Google Scholar

32. H. Norde, J. Appl. Phys. 50 (1979) 5052.10.1063/1.325607Suche in Google Scholar

33. S Karatas, Microelectron. Eng. 87 (2010) 1935.10.1016/j.mee.2009.11.168Suche in Google Scholar

34. R. K. Gupta, K. Ghosh, P. K. Kahol, Physica E 42 (2010) 1509.10.1016/j.physe.2009.12.007Suche in Google Scholar

Received: 2016-7-27
Accepted: 2016-9-20
Published Online: 2016-10-15
Published in Print: 2017-5-1

©2017 Walter de Gruyter GmbH, Berlin/Boston

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