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Full band Monte Carlo simulation - beyond the semiclassical approach
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Hans-Erik Nilsson
Published/Copyright:
May 9, 2008
A quantum mechanical extension of the full band ensemble Monte Carlo (MC) simulation method is presented. The new approach goes beyond the traditional semi-classical method generally used in MC simulations of charge transport in semiconductor materials and devices. The extension is necessary in high-field simulations of semiconductor materials with a complex unit cell, such as the hexagonal SiC polytypes or wurtzite GaN. Instead of complex unit cells the approach can also be used for super-cells, in order to understand charge transport at surfaces, around point defects, or in quantum wells.
Published Online: 2008-05-09
Published in Print: 2004-12
© de Gruyter 2004
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Keywords for this article
Monte Carlo methods;
charge transport;
semiconductor device simulation;
quantum transport
Articles in the same Issue
- Foreword
- An outline of quasi-probability*: Why quasi-Monte-Carlo methods are statistically valid and how their errors can be estimated statistically
- QMC techniques for CAT bond pricing*
- Parallel Quasi-Monte Carlo Methods for Linear Algebra Problems
- Algorithm of statistical simulation of dynamic systems with distributed change of structure*
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- The ⊝-Maruyama scheme for stochastic functional differential equations with distributed memory term*
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- On the Power of Quantum Algorithms for Vector Valued Mean Computation
- Parallel Quasirandom Walks on the Boundary
- Trajectory Splitting by Restricted Replication
- Upper Bounds for Bermudan Style Derivatives
- Stochastic Eulerian model for the flow simulation in porous media. Unconfined aquifers*
- Solution of the Space-dependent Wigner Equation Using a Particle Model
- Subgrid Modeling of Filtration in a Porous Medium with Multiscale Log-Stable permeability
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