Dual-Polarized Antenna Arrays with CMOS Power Amplifiers for SiP Integration at W-Band

References

[1] Hansen C. J., “WiGiG: Multi-gigabit wireless communications in the 60 GHz band,”IEEE Trans. Wireless Commun., vol. 18, no. 6, pp. 6–7, Dec. 2011.10.1109/MWC.2011.6108325Search in Google Scholar

[2] Emami S.et al., “A 60GHz CMOS phased-array transceiver pair for multi-Gb/s wireless communications,” inIEEE Int. Solid-State Circuits Conf., Feb. 2011, pp. 164–166.10.1109/ISSCC.2011.5746265Search in Google Scholar

[3] Patterson C., Dawn D., and Papapolymerou J., “A W-band CMOS PA Encapsulated in an Organic Flip-Chip Package,” inIEEE MTT-S Int. Microwave Symp. Dig., Jun. 2012, pp. 1–3.10.1109/MWSYM.2012.6258427Search in Google Scholar

[4] Lu H.-C.et al., “Flip-chip-assembled W-band CMOS chip modules on ceramic integrated passive device with transition compensation for millimeter-wave system-in-package integration,”IEEE Trans. Microw. Theory Tech., vol. 60, no. 3, pp. 766–777, Mar. 2012.10.1109/TMTT.2011.2176747Search in Google Scholar

[5] Atesal Y., Cetinoneri B., Alhalabi R., and Rebeiz G., “Wafer-scale W-band power amplifiers using on-chip antennas,” inIEEE Radio Frequency Integrated Circuits Symp., May 2010, pp. 469–472.10.1109/RFIC.2010.5477386Search in Google Scholar

[6] Person C.et al., “Antennas on silicon: Hybrid integration versus SoC solutions?” inEuropean Conf. on Antennas and Propagation, Mar. 2012, pp. 2599–2603.10.1109/EuCAP.2012.6206644Search in Google Scholar

[7] Tripodi L.et al., “Broadband CMOS millimeter-wave frequency multiplier with vivaldi antenna in 3-D chip-scale packaging,”IEEE Trans. Microw. Theory Tech., vol. 60, no. 12, pp. 3761–3768, 2012.Search in Google Scholar

[8] Zhao D. and Reynaert P., “An E-band power amplifier with broadband parallel-series power combiner in 40-nm CMOS,”IEEE Trans. Microw. Theory Tech., vol. 63, no. 2, pp. 683–690, Feb. 2015.10.1109/TMTT.2014.2379277Search in Google Scholar

[9] Tsai K. J.et al., “A W-band power amplifier in 65-nm CMOS with 27 GHz bandwidth and 14.8dBm saturated output power,” inIEEE Radio Frequency Integrated Circuits Symp., Jun. 2012, pp. 69–72.10.1109/RFIC.2012.6242234Search in Google Scholar

[10] Wu K. L.et al., “77–110 GHz 65-nm CMOS power amplifier Design,”IEEE Trans. THz Sci. Technol., vol. 4, no. 3, pp. 391–399, May 2014.10.1109/TTHZ.2014.2315451Search in Google Scholar

[11] Topak E., Hasch J., and Zwick T., “Compact topside millimeter-wave waveguide-to-microstrip transitions,”IEEE Microw. Wireless Compon. Lett., vol. 23, no. 12, pp. 641–643, Dec. 2013.10.1109/LMWC.2013.2284824Search in Google Scholar

[12] Tong Z. and Stelzer A., “A vertical transition between rectangular waveguide and coupled microstrip lines,”IEEE Microw. Wireless Compon. Lett., vol. 22, no. 5, pp. 251–253, May 2012.10.1109/LMWC.2012.2192719Search in Google Scholar

[13] Jing S., Fa-guo L., Li-hua H., Xiao-ying S., and Yan-qiu Z., “Waveguide-to-microstrip antipodal finline transition at W-band,” inInt. Conf. on Instrumentation, Measurement, Computer, Commun. and Control, Sept. 2013, pp. 510–513.10.1109/IMCCC.2013.116Search in Google Scholar

[14] Zhang C. W., “A novel W-band waveguide-to-microstrip antipodal finline transition,” inApplied Superconductivity and Electromagnetic Devices (ASEMD), 2013 IEEE Int. Conf. on, Oct. 2013, pp. 166–168.10.1109/ASEMD.2013.6780735Search in Google Scholar

[15] Giese M., Waldhelm J., and Jacob A. F., “A wideband differential microstrip-to-waveguide transition at W-band,” inGerman Microwave Conf., Nuremberg, Germany, Mar. 2015.10.1109/GEMIC.2015.7107781Search in Google Scholar

[16] Giese M., Meinhardt T., and Jacob A. F., “Compact wideband single-ended and differential microstrip-to-waveguide transitions at W-band,” inIEEE MTT-S Int. Microw. Symp., May 2015, pp. 1–4.10.1109/MWSYM.2015.7167143Search in Google Scholar

[17] Giese M., Friesicke C., and Jacob A. F., “Concept and system analysis of wideband transmit front-ends for high data rate communication systems at W-Band,” inInt. Conf. on Microw., Radar, and Wireless Commun., Jun. 2014, pp. 1–4.10.1109/MIKON.2014.6899971Search in Google Scholar

[18] Xu Z., Gu Q., and Chang M.-C., “A W-band current combined power amplifier with 14.8dBm Psat and 9.4% maximum PAE in 65nm CMOS,” inIEEE Radio Frequency Integrated Circuits Symp., 2011, pp. 1–4.10.1109/RFIC.2011.5940619Search in Google Scholar

[19] Lu D.-R.et al., “A 75.5-to-120.5-GHz, high-gain CMOS low-noise amplifier,” inIEEE MTT-S Int. Microw. Symp. Dig., 2012, pp. 1–3.10.1109/MWSYM.2012.6259481Search in Google Scholar

[20] Sandstrom D., Varonen M., Karkkainen M., and Halonen K., “W-band CMOS amplifiers achieving + 10 dBm saturated output power and 7.5 dB NF,”IEEE J. Solid-State Circuits, vol. 44, no. 12, pp. 3403–3409, Dec. 2009.10.1109/JSSC.2009.2032274Search in Google Scholar

[21] Balanis C. A.,Antenna Theory: Analysis and Design, 2nd ed. Wiley, 1996.Search in Google Scholar

[22] Tran T. A., S. Vehring, Y. Ding, A. Hamidian, and Boeck G., “Broadband W-band power amplifier using 40 nm bulk CMOS,” inGerman Microw. Conf., Mar. 2016, pp. 149–152.10.1109/GEMIC.2016.7461578Search in Google Scholar