Thermal Coupling in AlGaN/GaN Power Transistors
-
Frank Schnieder
and
Matthias Rudolph
Abstract
Thermal coupling in AlGaN/GaN transistors is investigated by means of thermal FEM (finite element method) simulation. The results are combined with electrical network simulation using an electro-thermal model. From the FEM analysis the thermal coupling matrix is established, describing the thermal interaction between the different cells of a power transistor. The matrix allows to extract an equivalent circuit for the thermal coupling in a straightforward way. The electrical transistor model is complemented by thermal ports to connect the cells via the thermal coupling network. The electro-thermal model developed yields information on the distribution of temperature and currents within a powerbar and thus is an important tool in transistor design.
Correction Note
This article was originally published under the DOI 10.1515/freq-2012-0031 by mistake.
©2013 by De Gruyter
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Articles in the same Issue
- Frontmatter
- A Novel Compact UWB Monopole Antenna with Bluetooth and Triple Notch Band
- Experimental Multiport Bicone Antenna
- Compact LPF Using T-shaped Resonator
- Thermal Coupling in AlGaN/GaN Power Transistors
- A Single-To-Differential LNA using Differential Active Inductor for GPS Applications
- Design of 28 GHz, 200 kW Gyrotron for ECRH Applications
- Hybrid-Strategy Attacks in Collaborative Spectrum Sensing of Cognitive Radio Networks
- Bit Error Rate Performance of Partially Coherent Dual-Branch SSC Receiver over Composite Fading Channels
- Variable-Rate Ring Convolutional Coded Continuous Phase Modulation Using Puncturing
