Abstract
This paper presents a new low-power super source follower (SSF) cell with large output voltage swing and better signal performance. The performance improvement is obtained by replacing one of MOS transistors by two-input floating gate MOS transistor. The bandwidth of the proposed circuit is enhanced by using a resistor in the feedback path of SSF. The basic operating principles of proposed SSF structures are discussed and their lower 3-dB frequency has been derived. An output stage is designed by using proposed SSF structures to verify the performance improvement. The simulations are performed in TSMC 0.18 um CMOS, BSIM3 and Level 49 technology by using Spectre simulator of Cadence.
©[2013] by Walter de Gruyter Berlin Boston
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