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Some Electrical Properties of Bi2O3 Thin Films

  • V. Dolocan
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Volume 45, Number 2 February 16
This chapter is in the book Volume 45, Number 2 February 16
© 2021 Walter de Gruyter GmbH, Berlin/Munich/Boston

© 2021 Walter de Gruyter GmbH, Berlin/Munich/Boston

Chapters in this book

  1. Frontmatter I
  2. Contents 367
  3. Systematic List 375
  4. Original Papers
  5. The Effect of Implantation Temperature on the Mechanism of Misfit Dislocation Formation 377
  6. Measurement of the Electron Drift Velocity in InSb up to Fields of 800 Y/cm in the Presence of Impact Ionization 387
  7. Strain Energy Controlled Shape of Crystals Forming Due to a Martensite Transformation or Decomposition 393
  8. On the Theory of Plastic Deformation with an Account of Dislocation Transformations of Several Types 403
  9. Electron Channeling in <111> Direction of Tungsten Crystals 411
  10. Annealing Spectrum of Cold-Worked Dilute Al-Li Alloys 419
  11. Phonon-Assisted Auger Recombination in Indirect Gap Semiconductors 423
  12. Laser Induced Gratings in CdS 433
  13. a-Particle Irradiation Damage and Stage I Recovery in Zinc 439
  14. Magnetocrystalline Anisotropy of Pr (Co1-xCux)5 Compounds. Experiment and Theoretical Analysis 445
  15. Plastic Deformation of Calcite Single Crystals Deformed in Compression Parallel to [111] 453
  16. Photoconductivity and the Negative Differential Photo-Effect in Sulfur-Annealed ZnS Single Crystals 463
  17. On the Ordering of Fe Atoms in FexNbS2 469
  18. ESR Studies of a Diacetylene Polymer 483
  19. Evidence for the Interaction between Magnetic Domain Walls and Dislocations in High-Purity Iron from Magnetomechanical Damping Experiments 493
  20. Etude au moyen de l'ordre directionnel d’une série de ferrites de manganèse à excès de manganèse 503
  21. Autoradiographic Detection of Getter Effect of Argon-Implanted Layers in Silicon 509
  22. Ultrasonic Investigation of the Phase Transitions in NH4Cl1-xBrx Mixed Crystals 513
  23. p-n Junctions in the Surface Region of Silicon Obtained by Evaporation of Silicon in Ultrahigh Vacuum 521
  24. Lattice Location and Determination of Thermal Amplitudes of Deuterium in a-PdD0.007 by Channeling 529
  25. Optical Properties of PbxSn1- x O Films 537
  26. The Mean Square Atomic Displacements and Enthalpies of Vacancy Formation in Some Semiconductors 543
  27. Coupling of Surface Acoustic Waves Propagating in Two Separated Piezoelectric Media 549
  28. A Study by Transmission Electron Microscopy and Diffraction of the Ternary Alloy System Cu2AuPd 553
  29. AC Conductivity of CdAs2-Based Glasses 559
  30. Spreading of Extrinsic Grain Boundary Dislocations in Plastically Deformed Aluminium 565
  31. Current Controlled Negative Resistance in GaAs at Low Temperatures 571
  32. Numerical Simulation of the AC Electrical Properties of Random Inhomogeneous Systems 579
  33. New High-Pressure Phase in [Ni(NH3)6] (Cl04)2 Detected by EPR 585
  34. Structure magnétique des MnCoSi 591
  35. ESR of Copper-Doped b-Alumina 599
  36. Magnetic Properties of Transition Metal-Metalloid Glasses 607
  37. The Seebeck Effect on Nb-Doped TiO2 Rutile 617
  38. a <100> Dislocation Loops in Magnesium Oxide 625
  39. Regime of Contact Emission Limited Current with Weak Harmonic Distortion of Steady Bias 631
  40. Influence of Upper Laue Areas on Fine Structure of Bend Contours near a High Symmetry Axis 639
  41. Dynamic Holograms on the Superposition States of Atoms 647
  42. The Diffusion of Iron in Copper and of Nickel in Silver 657
  43. Structure of Yacuum Evaporated CdxZn1-xS Thin Films 665
  44. Schottky Barrier on W-GaAs Contact 671
  45. Short Notes
  46. Imaging of Photorefractive Effects in LiNbO O by Double Crystal X-Ray Reflection Topography 679
  47. Comparison of Positron Annihilation and X-Ray Estimations of the Dislocation Density and Depth of Dislocation Profiles in Nickel Transformed into Hydride and Decomposed 683
  48. The Role of Different Local Centres in the Determination of the Concentration Dependence of the Intrinsic Emission Intensity in n-Type GaAs 687
  49. Photoconductivity of p-Type CdSnP2 Single Crystals 691
  50. Spin-Lattice Relaxation at High Temperatures in Heavily Doped n-Type Silicon 697
  51. Investigation of Magnetic Preferred Directions in an Fe-Mn Base Alloy 701
  52. Hyperfine Magnetic Field at Sn in Heusler Alloys Rh2MnSn and Rh2NiSn 705
  53. Current Pulses in ZnS:Cu Crystals Stimulated by Electric Field at Low Temperatures 709
  54. Surface Structure Determination via LEED Rotation Diagrams and the Relaxation of W (001) 713
  55. A Comparison of Calculated Arsenic Implantation Profiles in Silicon with Experimental Results 717
  56. A Simple Method for the Determination of Parameters of Ion Implanted Doping Profiles by Means of Threshold Voltage Measurements of MOSFET's 721
  57. Solute-Vacancy Binding Energies in Magnesium Alloys 727
  58. On the Creep of Germanium and Silicon 731
  59. On the Mossbauer Spectrum of FeC2O4 2h2o 735
  60. Paramagnetic Behaviour of Gc(FexCo1-x)2 Compounds 741
  61. Magnetic Properties and Structures of TbAlGa and HoAlGa 745
  62. Some Electrical Properties of Bi2O3 Thin Films 751
  63. Positron Annihilation for Martensite Defect Identification 755
  64. Photocurrents through Polythiourea and Polymalononitrile Thin Films 759
  65. Channeling Studies of As-Grown GaN 763
  66. Mechanoluminescent Spectra of Silicon Carbide Powders 767
  67. Growth of Al2O3 Layer on MBE GaAs 771
  68. Some New Aspects of the SCLC Characteristic of Homogeneous Insulators with Traps 775
  69. Piezoconductivity of ft -Rhombohedral Boron 779
  70. Pre-printed Titles 785
  71. Backmatter 795
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