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Magnetic Properties and 57 Fe Mössbauer Effect in V 1-x Fe x Alloys
-
A. M. Van Der Kraan
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Chapters in this book
- Frontmatter I
- Classification Scheme II
- Author Index V
- Physica status solidi (a) applied research 1
- Contents 3
-
Review Article
- Injection of Degenerate Electron-Hole Plasma 11
-
Original Papers and Short Notes
-
Structure
- AC Conductivity, Calorimetric, X-Ray, and Raman Study of the Hexagonal Phase TlInS2-III 43
- Coherence Description of a Double Crystal Diffractometer 49
- Effect of Structure Transformation on Creep and Creep Recovery of Al-14 wt%Zn 61
- Exact Solution of the Takagi-Taupin Equation for Dynamical X-Ray Bragg Diffraction by a Crystal with a Transition Layer 69
- Double-Crystal Topographic Investigation of Misfit Dislocations in Silicon Epitaxial Layers 77
- Thin e-Phase Films Prepared by Alloy Evaporation 89
- Shape and Arrangement of the "Hexagonal Domain" and Distribution of Ferroelectric Domains in GASH Single Crystals 93
- Destructive Interference and Multiple Scattering Effects Observed in Ca K-Edge EXAFS Spectra 103
- Determination of Thermodynamic Parameters of the Amorphous Selenium Films Crystallization 113
- Phase Transition in the System Solid-Gas Admixture Due to the Macroscopic Defect Formation and Growth 121
- The Structure of Twist Boundaries in Terms of Surface Dislocations 129
- The Transformation e -> a" in Iron-Nitrogen Solid Solutions Studied by Mössbauer Spectrometry 137
- An X-Ray Interferometer with an Elastically Deformed Crystal 143
- The Application of Landau's Theory for Studying First-Order Phase Transitions by the Internal Friction Method 151
-
Lattice properties
- Neutron Powder Diffraction Study of the Debye-Waller Factor in TiC and TiN Compounds and Comparison with X-Ray Results 157
- Surface Layers and Far-Infrared Quasi-Harmonic Oscillators in Triglycine Sulphate at 4 K 165
-
Defects, atomistic aspects
- Dielectric Relaxations in Dy2O2 175
- Steady-State Creep and Strain Transients for Stress Change Tests in an Al-0.4 wt% Li Solid Solution Alloy 181
- Diffusion and Recrystallization Processes during Annealing of N+- and P+- Implanted LiNbO 3 193
- Dissociation of Superdislocations and Damping in the Ll2 Ordered Structure 207
- Dislocation-Structure Changes during the Dip Tests and the Dynamical Internal Stress in Al-Mg Alloys at High Temperatures 213
- The Strength and Plasticity of GaAs in Saturated Melts of Solvent Metals at the Temperature of Epitaxy 223
-
Magnetism
- Magnetic Properties and 57 Fe Mössbauer Effect in V 1-x Fe x Alloys 231
- Elastic Behaviour of Mixed Li-Ni Ferrites 239
-
Extended electronic states and transitions
- Monte-Carlo Simulation of keV-Electron Scattering in Solid Targets 245
-
Localized electronic states and transitions
- Reflection and Fluorescence Emission Spectra in the Ag 1-x Cu x I System 261
- On the Kinetics of X-Ray Induced Luminescence in Natural Quartz 267
- Photoluminescence Spectra of Pb 1-x Sn x Te Epitaxial Layers and Heterostructures up to Room Temperature 277
- Interpretation of the Curves of Thermally Stimulated Luminescence in the Case of Tunneling Recombination 283
-
Electric transport
- The Electronic Properties of Macromolecular Structures with Conjugated Bonds Obtained by Chemical Modification of Certain Aliphatic Polymers 291
- Negative Charge Transport in Fluorethylenepropylene by the Constant Current Method 297
- Properties of Sputtered Amorphous Silicon Films Prepared under a Reduced Pumping Speed 309
- A New Model for AC Conduction in Disordered Solids 315
- Microwave Anisotropy and Dichroism of Ferroelectric Crystals CH 3 NH 3 HgCl 3 325
- Theory of Transient Currents in Dielectrics at a Limited Level of Single Injection 331
- Charge Transport in Cu-Cd Ferrospinels 343
- Double Source Photoconductivity of InP:Fe 347
-
Device-related phenomena
- The Characteristics of Thin-Film Gallium Phosphide MOS Structures with a Tunnel Transparent Native Anodic Oxide 355
- N-CdS/p-AgInSe2 Solar Cells by Electrodeposition 365
- Ion Beam Contacting of Silicon. II. Antimony in n-Silicon 369
- Combination of a Silicon Photodiode and a Scintillator as a Dose Rate Detector 375
- A Simple Model of MOS Transistors on Large-Grain Polycrystalline Silicon 381
- Radiation Effects in a Photo-Coupler with High-Energy Electrons and y-Rays and Recovery by Current Annealing 389
-
Short Notes
- Structure Images of the Hexagonal Nb 5 Ge 3 (D88) Structure 401
- Stress-Induced Isothermal Formation of Films during LPE Growth of III-V Compounds with a/a=0 405
- Atomic Arrangement in Amorphous Er4Co3 409
- Mass-Spectrometry of Tungsten-Silicon System 415
- On the Connection between the Melting Temperature and the Parameters Obtained from Thermally Stimulated Depolarization Experiments 419
- On the Free Energies of Hexagonal Dislocation Loops at High Temperatures 423
- On the Behaviour of Iodine in PbTe and SnTe 427
- Doppler Broadening of the Annihilation Gamma Line in KCl and LiF 431
- On Obtaining f-T Characteristics without Hysteresis in Quartz 435
- Preparation and Magnetic Properties of YMnSi 439
- Some Remarks on the Applicability of the Positron Annihilation Technique for Studying the Electronic Structure of Metallic Glasses 445
- An Approximate Approach to Absorption Correction in Electron-Probe Microanalysis 451
- The Absorption Edge of Lead(II) in Oxide Systems 455
- The Influence of Isoelectronic Impurities on Intrinsic Deep Levels in Liquid Phase Epitaxial Gallium Arsenide 459
- A Simple Method for the Determination of Both Photoionization and Photoneutralization Cross Sections of Deep Levels by Optical DLTS 463
- On the Thermal Resistance and Its Possible Role in Thermoluminescence Measurements 467
- Drift Mobility of Electrons Parallel to the c-Axis in InSe 471
- Electrical Conductivity Measurements to Test for Rotating Sulfate Ions in Fast Ion Conductors 475
- Electrical Properties of CaMnO 3-o 479
- In 2 O 3 and In 2 O 3 :Sn (ITO) Films by Post-Oxidation of Metal Films 483
- Optimization of the Heat Treatment for Forming AuGe Based Contacts to n-GaAs 487
- Coordinate Sensitive Photoelement on the Basis of the Photoelectret State in Vitreous Semiconductors 491
- Optoelectronic Switches on the Basis of Mercuric Iodide (Red Phase, a-Hgl 2 ) 495
- Optical Effect in Normally-Off GaAs MESFET 499
-
Pre-Printed Titles
- Pre-Printed Titles of papers to be published in the next issues of physica status solidi (a) and physica status olidi (b) 505
- Backmatter 513
Chapters in this book
- Frontmatter I
- Classification Scheme II
- Author Index V
- Physica status solidi (a) applied research 1
- Contents 3
-
Review Article
- Injection of Degenerate Electron-Hole Plasma 11
-
Original Papers and Short Notes
-
Structure
- AC Conductivity, Calorimetric, X-Ray, and Raman Study of the Hexagonal Phase TlInS2-III 43
- Coherence Description of a Double Crystal Diffractometer 49
- Effect of Structure Transformation on Creep and Creep Recovery of Al-14 wt%Zn 61
- Exact Solution of the Takagi-Taupin Equation for Dynamical X-Ray Bragg Diffraction by a Crystal with a Transition Layer 69
- Double-Crystal Topographic Investigation of Misfit Dislocations in Silicon Epitaxial Layers 77
- Thin e-Phase Films Prepared by Alloy Evaporation 89
- Shape and Arrangement of the "Hexagonal Domain" and Distribution of Ferroelectric Domains in GASH Single Crystals 93
- Destructive Interference and Multiple Scattering Effects Observed in Ca K-Edge EXAFS Spectra 103
- Determination of Thermodynamic Parameters of the Amorphous Selenium Films Crystallization 113
- Phase Transition in the System Solid-Gas Admixture Due to the Macroscopic Defect Formation and Growth 121
- The Structure of Twist Boundaries in Terms of Surface Dislocations 129
- The Transformation e -> a" in Iron-Nitrogen Solid Solutions Studied by Mössbauer Spectrometry 137
- An X-Ray Interferometer with an Elastically Deformed Crystal 143
- The Application of Landau's Theory for Studying First-Order Phase Transitions by the Internal Friction Method 151
-
Lattice properties
- Neutron Powder Diffraction Study of the Debye-Waller Factor in TiC and TiN Compounds and Comparison with X-Ray Results 157
- Surface Layers and Far-Infrared Quasi-Harmonic Oscillators in Triglycine Sulphate at 4 K 165
-
Defects, atomistic aspects
- Dielectric Relaxations in Dy2O2 175
- Steady-State Creep and Strain Transients for Stress Change Tests in an Al-0.4 wt% Li Solid Solution Alloy 181
- Diffusion and Recrystallization Processes during Annealing of N+- and P+- Implanted LiNbO 3 193
- Dissociation of Superdislocations and Damping in the Ll2 Ordered Structure 207
- Dislocation-Structure Changes during the Dip Tests and the Dynamical Internal Stress in Al-Mg Alloys at High Temperatures 213
- The Strength and Plasticity of GaAs in Saturated Melts of Solvent Metals at the Temperature of Epitaxy 223
-
Magnetism
- Magnetic Properties and 57 Fe Mössbauer Effect in V 1-x Fe x Alloys 231
- Elastic Behaviour of Mixed Li-Ni Ferrites 239
-
Extended electronic states and transitions
- Monte-Carlo Simulation of keV-Electron Scattering in Solid Targets 245
-
Localized electronic states and transitions
- Reflection and Fluorescence Emission Spectra in the Ag 1-x Cu x I System 261
- On the Kinetics of X-Ray Induced Luminescence in Natural Quartz 267
- Photoluminescence Spectra of Pb 1-x Sn x Te Epitaxial Layers and Heterostructures up to Room Temperature 277
- Interpretation of the Curves of Thermally Stimulated Luminescence in the Case of Tunneling Recombination 283
-
Electric transport
- The Electronic Properties of Macromolecular Structures with Conjugated Bonds Obtained by Chemical Modification of Certain Aliphatic Polymers 291
- Negative Charge Transport in Fluorethylenepropylene by the Constant Current Method 297
- Properties of Sputtered Amorphous Silicon Films Prepared under a Reduced Pumping Speed 309
- A New Model for AC Conduction in Disordered Solids 315
- Microwave Anisotropy and Dichroism of Ferroelectric Crystals CH 3 NH 3 HgCl 3 325
- Theory of Transient Currents in Dielectrics at a Limited Level of Single Injection 331
- Charge Transport in Cu-Cd Ferrospinels 343
- Double Source Photoconductivity of InP:Fe 347
-
Device-related phenomena
- The Characteristics of Thin-Film Gallium Phosphide MOS Structures with a Tunnel Transparent Native Anodic Oxide 355
- N-CdS/p-AgInSe2 Solar Cells by Electrodeposition 365
- Ion Beam Contacting of Silicon. II. Antimony in n-Silicon 369
- Combination of a Silicon Photodiode and a Scintillator as a Dose Rate Detector 375
- A Simple Model of MOS Transistors on Large-Grain Polycrystalline Silicon 381
- Radiation Effects in a Photo-Coupler with High-Energy Electrons and y-Rays and Recovery by Current Annealing 389
-
Short Notes
- Structure Images of the Hexagonal Nb 5 Ge 3 (D88) Structure 401
- Stress-Induced Isothermal Formation of Films during LPE Growth of III-V Compounds with a/a=0 405
- Atomic Arrangement in Amorphous Er4Co3 409
- Mass-Spectrometry of Tungsten-Silicon System 415
- On the Connection between the Melting Temperature and the Parameters Obtained from Thermally Stimulated Depolarization Experiments 419
- On the Free Energies of Hexagonal Dislocation Loops at High Temperatures 423
- On the Behaviour of Iodine in PbTe and SnTe 427
- Doppler Broadening of the Annihilation Gamma Line in KCl and LiF 431
- On Obtaining f-T Characteristics without Hysteresis in Quartz 435
- Preparation and Magnetic Properties of YMnSi 439
- Some Remarks on the Applicability of the Positron Annihilation Technique for Studying the Electronic Structure of Metallic Glasses 445
- An Approximate Approach to Absorption Correction in Electron-Probe Microanalysis 451
- The Absorption Edge of Lead(II) in Oxide Systems 455
- The Influence of Isoelectronic Impurities on Intrinsic Deep Levels in Liquid Phase Epitaxial Gallium Arsenide 459
- A Simple Method for the Determination of Both Photoionization and Photoneutralization Cross Sections of Deep Levels by Optical DLTS 463
- On the Thermal Resistance and Its Possible Role in Thermoluminescence Measurements 467
- Drift Mobility of Electrons Parallel to the c-Axis in InSe 471
- Electrical Conductivity Measurements to Test for Rotating Sulfate Ions in Fast Ion Conductors 475
- Electrical Properties of CaMnO 3-o 479
- In 2 O 3 and In 2 O 3 :Sn (ITO) Films by Post-Oxidation of Metal Films 483
- Optimization of the Heat Treatment for Forming AuGe Based Contacts to n-GaAs 487
- Coordinate Sensitive Photoelement on the Basis of the Photoelectret State in Vitreous Semiconductors 491
- Optoelectronic Switches on the Basis of Mercuric Iodide (Red Phase, a-Hgl 2 ) 495
- Optical Effect in Normally-Off GaAs MESFET 499
-
Pre-Printed Titles
- Pre-Printed Titles of papers to be published in the next issues of physica status solidi (a) and physica status olidi (b) 505
- Backmatter 513