Startseite Indentation behaviour of (011) thin films of III–V semiconductors: polarity effect differences between GaAs and InP
Artikel
Lizenziert
Nicht lizenziert Erfordert eine Authentifizierung

Indentation behaviour of (011) thin films of III–V semiconductors: polarity effect differences between GaAs and InP

  • Ludovic Largeau EMAIL logo , Gilles Patriarche , Eric Le Bourhis und Jean-Pierre Rivière
Veröffentlicht/Copyright: 21. Januar 2022
Veröffentlichen auch Sie bei De Gruyter Brill

Abstract

(011) thin films of GaAs and InP (220 and 250 μm thick, respectively) were deformed by a Vickers indenter at elevated temperatures (350 – 400 °C) under loads in the range 0.4 – 2.9 N. For loads higher than 1.9 N, symmetric punching through InP was detected at the opposite face while it was asymmetric through GaAs. In InP, when the punching mechanism took place, pile-up around the indent site progressively disappeared. Moreover, the measured plastic volumes reveal that plastic flow throughout the specimens is volume conservative, implying that pile-up and punching events are related. In GaAs, the anisotropic pile-up plasticity was studied using transmission electron microscopy. Models describing the material flow through the samples and reverse flow of matter are proposed.


Ludovic Largeau, Laboratoire de Photonique et de Nanostructures, CNRS UPR 20, Route de Nozay, 91460 Marcoussis, France, Tel.: +33 1 69 63 61 74, Fax: +33 1 69 63 60 06

References

[1] E. Le Bourhis, G. Patriarche: Prog. Cryst. Growth Carac. Mater. 47 (2003) 1.10.1016/j.pcrysgrow.2004.09.001Suche in Google Scholar

[2] K.L. Johnson: Contact Mechanics, Cambridge University Press, 1985.10.1017/CBO9781139171731Suche in Google Scholar

[3] Y. Choi, S. Suresh: Scripta Mater. 48 (2003) 249.10.1016/S1359-6462(02)00377-9Suche in Google Scholar

[4] L. Largeau, G. Patriarche, A. Rivière, J.P. Rivière, E. Le Bourhis: J. Mater. Sci. 39 (2004) 943.10.1023/B:JMSC.0000012926.63109.00Suche in Google Scholar

[5] G. Patriarche, L. Largeau, J.P. Rivière, E. Le Bourhis: Phil. Mag. 84 (2004) 3281.10.1080/14786430410001720381Suche in Google Scholar

[6] G. Patriarche, L. Largeau, J.P. Rivière, E. Le Bourhis: Phil. Mag. Lett. 85 (2005) 1.10.1080/09500830500157736Suche in Google Scholar

[7] G. Patriarche, E. Le Bourhis, L. Largeau, J.P. Rivière: Phys. Stat. Sol. (c) 2 (2005) 2004.10.1002/pssc.200460548Suche in Google Scholar

[8] G. Patriarche, L. Largeau, J.P. Rivière, E. Le Bourhis: J. Phys. D: Appl. Phys. 38 (2005) 1140.10.1088/0022-3727/38/8/007Suche in Google Scholar

[9] L. Largeau, G. Patriarche, E. Le Bourhis, A. Rivière, J.P. Rivière: Phil. Mag. 83 (2003) 1653.10.1080/1478643031000095649Suche in Google Scholar

[10] I. Yonenaga: J. Phys. Paris III 7 (1997) 1435.10.1051/jp3:1997198Suche in Google Scholar

[11] J. Rabier, A. George: Rev. Phys. Appl. 22 (1987) 1327.10.1051/rphysap:0198700220110132700Suche in Google Scholar

[12] J. Taftø, J.C.H. Spence: J. Appl. Cristallogr. 15 (1982) 60.10.1107/S0021889882011352Suche in Google Scholar

[13] P. Gall, J.P. Peyrade, R. Coquille, F. Reynaud: J. Cryst. Growth 82 (1987) 689.10.1016/S0022-0248(87)80014-3Suche in Google Scholar

[14] L. Largeau, G. Patriarche, E. Le Bourhis: J. Mater. Sci. Lett. 21 (2002) 401.10.1023/A:1014971619783Suche in Google Scholar

Received: 2006-02-08
Accepted: 2006-03-01
Published Online: 2022-01-21

© 2006 Carl Hanser Verlag, München

Artikel in diesem Heft

  1. Contents
  2. Editorial
  3. Nanoindentation creep and stress relaxation tests of polycarbonate: Analysis of viscoelastic properties by different rheological models
  4. Investigation of SiO2 thin films on Si substrates for use as standards for laser-acoustic measuring devices
  5. Determination of the critical tensile stress of sapphire by spherical indentation with additional lateral forces
  6. The deformation behaviour of electrodeposited nanocrystalline Ni in an atomic force microscope with a newly developed in situ bending machine
  7. In situ electrochemical nanoindentation of a nickel (111) single crystal: hydrogen effect on pop-in behaviour
  8. Indentation behaviour of (011) thin films of III–V semiconductors: polarity effect differences between GaAs and InP
  9. Multiwall carbon nanotubes-based composites – mechanical characterization using the nanoindentation technique
  10. Nanoindentation studies of stamp materials for nanoimprint lithography
  11. Experimental and thermodynamic evaluation of the Co–Cr–C system
  12. Thermodynamics of high-temperature cuprous sulfide
  13. Sintering of Si3N4 with Li-exchanged zeolite additive
  14. Effect of LiYO2 addition on sintering behavior and indentation properties of silicon nitride ceramics
  15. Mechanism of quasi-viscous flow of zinc single crystals
  16. The absolute thermoelectric power of chromium, molybdenum, and tungsten
  17. Modelling of metal – mould interface resistance in the Al-11.5 wt.% Si alloy casting process
  18. Award/Preisverleihung
  19. Personal
  20. Conferences
  21. Contents
  22. Editorial
  23. Editorial
  24. Basic
  25. Nanoindentation creep and stress relaxation tests of polycarbonate: Analysis of viscoelastic properties by different rheological models
  26. Investigation of SiO2 thin films on Si substrates for use as standards for laser-acoustic measuring devices
  27. Determination of the critical tensile stress of sapphire by spherical indentation with additional lateral forces
  28. The deformation behaviour of electrodeposited nanocrystalline Ni in an atomic force microscope with a newly developed in situ bending machine
  29. In situ electrochemical nanoindentation of a nickel (111) single crystal: hydrogen effect on pop-in behaviour
  30. Indentation behaviour of (011) thin films of III–V semiconductors: polarity effect differences between GaAs and InP
  31. Multiwall carbon nanotubes-based composites – mechanical characterization using the nanoindentation technique
  32. Nanoindentation studies of stamp materials for nanoimprint lithography
  33. Experimental and thermodynamic evaluation of the Co–Cr–C system
  34. Applied
  35. Thermodynamics of high-temperature cuprous sulfide
  36. Sintering of Si3N4 with Li-exchanged zeolite additive
  37. Effect of LiYO2 addition on sintering behavior and indentation properties of silicon nitride ceramics
  38. Mechanism of quasi-viscous flow of zinc single crystals
  39. The absolute thermoelectric power of chromium, molybdenum, and tungsten
  40. Modelling of metal – mould interface resistance in the Al-11.5 wt.% Si alloy casting process
  41. Kösterpreis
  42. Award/Preisverleihung
  43. Notifications
  44. Personal
  45. Conferences
Heruntergeladen am 2.12.2025 von https://www.degruyterbrill.com/document/doi/10.1515/ijmr-2006-0194/pdf
Button zum nach oben scrollen